SI7108DN-T1-GE3 The Vishay Dale SI7108DN-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 14A continuous drain current. It features a low Rds On of 4.9mOhm at 22A and 10V.
Mfr Part #:

SI7108DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7108DN-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 14A continuous drain current. It features a low Rds On of 4.9mOhm at 22A and 10V.
✓ Total Stock: 205,630 pcs
$ Price Range: $0.99

SI7108DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,000 pcs
200000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,630 pcs
5630 pcs On Request 1 On Request On Request 0939+ On Request On Request

SI7108DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7108DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7108DN-T1-GE3 is a fast-switching N-Channel MOSFET designed for applications requiring low on-resistance and efficient power handling. It offers a drain-source voltage of 20V and a continuous drain current of 14A at 25°C ambient temperature.

 

Key electrical characteristics include a maximum on-resistance of 4.9mOhm at a gate-source voltage of 10V and a drain current of 22A. The gate threshold voltage is 2V at 250µA, and the maximum gate-source voltage is ±16V. The device has a typical gate charge of 1nC at 4.5V.

 

This MOSFET is housed in a compact PowerPAK 1212-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL rating of 1.

 

Applications include synchronous rectification, point-of-load converters, protection devices, and hot swap circuits.

SI7108DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si7108DN N-Channel 20V Fast Switching MOSFET
Subcategory: N-Channel

SI7108DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7108DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7108DN-T1-GE3 Features

  • N-Channel 20V fast switching MOSFET.
  • Low 4.9mOhm Rds On at 10V.
  • 14A continuous drain current.
  • Compact PowerPAK 1212-8 package.
  • Surface mountable design.

SI7108DN-T1-GE3 Applications

  • Ideal for synchronous rectification.
  • Used in point-of-load converters.
  • Suitable for protection circuits.
  • Applicable for hot swap functions.

SI7108DN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7108DN-T1-GE3?

The drain-source voltage (Vds) is 20 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 14 A at 25°C ambient temperature.

What is the Rds On (Max) for this MOSFET?

The Rds On is a maximum of 4.9 mOhm at a drain current of 22A and gate-source voltage of 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI7108DN-T1-GE3 in?

It is in a PowerPAK 1212-8 package.

How is the SI7108DN-T1-GE3 mounted?

It is a surface mount device.

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