SI7108DN-T1-E3 The Vishay Dale SI7108DN-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 14A continuous current rating. It is housed in a surface-mount PowerPAK 1212-8 package.
Mfr Part #:

SI7108DN-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7108DN-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 14A continuous current rating. It is housed in a surface-mount PowerPAK 1212-8 package.
✓ Total Stock: 11,603 pcs
$ Price Range: $0.99

SI7108DN-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,378 pcs
7378 pcs On Request 1 On Request On Request 1321+ On Request On Request
Non-Authorised Inventory information
4,225 pcs
4225 pcs On Request 1 On Request On Request 16+ On Request On Request

SI7108DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7108DN-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7108DN-T1-E3 is an N-Channel MOSFET designed for fast switching applications. It features a 20V drain-source voltage (VDS) and a continuous drain current (ID) of 14A at 25°C ambient temperature.

 

This MOSFET offers a low on-resistance (RDS(on)) of 4.9mΩ at 22A and 10V gate-source voltage, and 6.1mΩ at 19.7A and 4.5V gate-source voltage. The gate charge (Qg) is typically 1nC at 4.5V gate-source voltage. It operates within a temperature range of -55°C to 150°C.

 

The device utilizes TrenchFET Gen II technology for ultra-low on-resistance and is packaged in a low-profile PowerPAK 1212-8 surface-mount package. The maximum power dissipation is 1.5W at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 33°C/W (10s pulse) and 81°C/W (steady state).

 

Applications include synchronous rectification, point-of-load converters, protection devices, and hot swap.

SI7108DN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si7108DN N-Channel 20V Fast Switching MOSFET
Subcategory: N-Channel

SI7108DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7108DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7108DN-T1-E3 Features

  • N-Channel 20V fast switching MOSFET.
  • Ultra low on-resistance achieved.
  • Low profile PowerPAK 1212-8 package.
  • Surface mountable design.
  • Wide operating temperature range.

SI7108DN-T1-E3 Applications

  • Used for synchronous rectification.
  • Suitable for point-of-load converters.
  • Applicable for protection devices.
  • Ideal for hot swap applications.

SI7108DN-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

The drain-source voltage rating (Vdss) is 20V.

What package does this device come in?

The device is offered in a PowerPAK 1212-8 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the maximum on-resistance at 10V gate drive?

The maximum on-resistance (Rds(on)) is 4.9mOhm at Id=22A, Vgs=10V.

What gate charge is required at 4.5V?

The maximum gate charge (Qg) is 30nC at Vgs=4.5V.

Is this device RoHS compliant?

RoHS status is marked as Compliant (RoHS3) in the database, but this is unverified.

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