| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
195 pcs
|
195 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET from Vishay Dale, part number SI7107DN-T1-E3, is designed for load and power switching applications in portable devices. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 9.8A at 25°C ambient temperature.
The MOSFET exhibits a low on-resistance, with a maximum of 10.8mΩ at a gate-source voltage (Vgs) of -4.5V and a drain current of 15.3A. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 450µA. It operates within a temperature range of -55°C to 150°C.
Packaged in a compact PowerPAK® 1212-8, this device is suitable for surface mounting. Its thermal characteristics include a maximum power dissipation of 1.5W at 25°C ambient temperature. The device is rated for a gate-source voltage of ±8V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
PowerPAK 1212-8.
-55°C to 150°C (junction).
Maximum 10.8mΩ at VGS=-4.5V, ID=-15.3A.
9.8A at 25°C ambient.
Maximum 1V at VDS=VGS, ID=-450µA.
P-Channel.