| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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59,239 pcs
|
59239 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
10,833 pcs
|
10833 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Vishay Dale SI7106DN-T1-GE3 is a fast-switching, N-Channel Power MOSFET designed for applications requiring efficient power management. It offers a 20V drain-source breakdown voltage and a continuous drain current capability of up to 19.5A at 25°C.
Key electrical characteristics include a low on-resistance of 6.2mOhm at 19.5A and 4.5V Vgs, and a gate threshold voltage of 1.5V maximum at 250µA. The MOSFET is optimized for PWM applications and features a low thermal resistance PowerPAK 1212-8 package with a low profile of 1.07 mm.
This component operates within a temperature range of -55°C to 150°C. It is suitable for synchronous rectification and other power switching applications where high efficiency and compact size are critical. The device is available in a RoHS 3 compliant package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
12.5A maximum at 25°C ambient (19.5A typical).
-55°C to 150°C junction temperature.
PowerPAK 1212-8 surface mount package.
6.2mΩ maximum at 4.5V gate drive and 19.5A drain current; 9.8mΩ maximum at 2.5V gate drive and 15.5A.
1.5V maximum at 250µA drain current.
17.5 nC typical at 4.5V gate voltage.