| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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72,320 pcs
|
72320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
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The Vishay Dale Si7104DN-T1-E3 is an N-Channel MOSFET designed for efficient power management applications. It features a 12V drain-source voltage and a high continuous drain current capability of 35A at 25°C case temperature.
This MOSFET offers a low on-state resistance of 3.7 mΩ at 26.1A and 4.5V Vgs, and 7 mΩ at 19A and 2.5V Vgs. It has a gate charge of 70 nC typical at 10V Vgs and an input capacitance of 2800 pF typical at 6V Vds.
The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 52W at 25°C case temperature or 3.8W at 25°C ambient temperature. It is packaged in a PowerPAK 1212-8 surface-mount package, suitable for applications requiring small size and low profile.
Key features include TrenchFET power MOSFET technology and low thermal resistance. The Si7104DN-T1-E3 is suitable for synchronous rectification and point-of-load applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 12V (minimum at ID=250µA).
It comes in a PowerPAK 1212-8 surface mount package.
-55°C to 150°C (junction temperature).
35A at case temperature 25°C, and 26.1A at ambient temperature 25°C.
Maximum 3.7mΩ at ID=26.1A and VGS=4.5V, and 7mΩ at ID=19A and VGS=2.5V.
Maximum 1.8V at ID=250µA.
52W at case temperature 25°C, and 3.8W at ambient temperature 25°C.