SI7101DN-T1-GE3 The Vishay Dale SI7101DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 35A. It is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SI7101DN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7101DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 35A. It is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 32,152 pcs
$ Price Range: $0.99

SI7101DN-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
17,925 pcs
17925 pcs On Request 1 On Request On Request 1936+ On Request On Request
Non-Authorised Inventory information
13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,207 pcs
1207 pcs On Request 1 On Request On Request On Request On Request On Request

SI7101DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7101DN-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI7101DN-T1-GE3 is a P-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 35A at 25°C case temperature.

 

The MOSFET offers a low on-resistance (Rds On) of 7.2mΩ at 10V gate-source voltage and 15A drain current. The gate charge (Qg) is typically 32nC. It operates within a junction temperature range of -55°C to 150°C.

 

Packaged in a surface-mount PowerPAK 1212-8 configuration, this component is suitable for applications requiring efficient power management. The device is tested for Rg and UIS, and is RoHS and Halogen-free compliant.

 

Key electrical characteristics include a gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. Power dissipation is rated at 52W (Tc) and 3.7W (Ta).

SI7101DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7101DN-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI7101DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI7101DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7101DN-T1-GE3 Features

  • P-Channel 30V Power MOSFET
  • Low Rds On: 7.2mΩ at 10V
  • Continuous Drain Current: 35A
  • PowerPAK 1212-8 Surface Mount Package
  • RoHS and Halogen-free Compliant

SI7101DN-T1-GE3 Applications

  • Ideal for power management in portable devices.
  • Suitable for load switching applications.
  • Used in DC-DC converter circuits.
  • Designed for battery protection systems.

SI7101DN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7101DN-T1-GE3?

The maximum drain-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 35A at 25°C case temperature.

What is the Rds On (Max) at Vgs = -10V?

The Rds On (Max) at Vgs = -10V is 7.2mΩ.

What is the typical gate charge (Qg)?

The typical gate charge is 32nC.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7101DN-T1-GE3 in?

It is in a PowerPAK 1212-8 surface mount package.

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