| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,420 pcs
|
2420 pcs | On Request | 1 | On Request | On Request | 1014+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6973DQ-T1-E3 is a dual P-channel MOSFET housed in an 8-TSSOP package, suitable for surface mounting. This device offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.1A. Its on-resistance (Rds On) is a maximum of 30mOhm at 4.8A and 4.5V gate-source voltage, with a gate charge (Qg) of 30nC at 4.5V.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ). It features a logic level gate, making it suitable for lower voltage control applications. The device has a power dissipation of 830mW and a gate threshold voltage (Vgs(th)) of 450mV at 250µA.
This component is classified under MOSFET technology and is configured as two P-channel MOSFETs. Its surface mount capability and specific electrical characteristics make it a candidate for various power management and switching applications where space and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-TSSOP surface-mount package.
-55°C to 150°C (junction temperature).
4.1A.
30mΩ at Vgs = 4.5V and Id = 4.8A.
450mV at Id = 250µA.
Dual P-channel (2 P-Channel) MOSFET.