SI6969DQ-T1-E3 The Vishay Dale SI6969DQ-T1-E3 is a dual P-channel MOSFET designed for 12V operation. It features a low on-resistance and is housed in an 8-TSSOP package.
Mfr Part #:

SI6969DQ-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI6969DQ-T1-E3 is a dual P-channel MOSFET designed for 12V operation. It features a low on-resistance and is housed in an 8-TSSOP package.
✓ Total Stock: 3,674 pcs
$ Price Range: $0.99

SI6969DQ-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,674 pcs
3674 pcs On Request 1 On Request On Request 24+ On Request On Request

SI6969DQ-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI6969DQ-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI6969DQ-T1-E3 is a dual P-channel MOSFET with a drain-source voltage (Vdss) of 12V. This component is designed for surface mounting and comes in an 8-TSSOP package.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 34mOhm at 4.6A and 4.5V, and a gate charge (Qg) of 40nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 450mV at 250µA. It has a power dissipation rating of 1.1W.

 

Operating within a temperature range of -55°C to 150°C (TJ), this MOSFET utilizes Metal Oxide Semiconductor Field-Effect Transistor technology. It features a logic level gate, making it suitable for various switching applications. The dual P-channel configuration offers flexibility in circuit design.

SI6969DQ-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: Vishay Dale SI6969DQ-T1-E3 Dual P-Channel MOSFET
Subcategory: Arrays

SI6969DQ-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI6969DQ-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI6969DQ-T1-E3 Features

  • Dual P-channel MOSFET configuration.
  • 12V drain-source voltage rating.
  • Low 34mOhm on-resistance.
  • Logic level gate feature.
  • Surface mount 8-TSSOP package.

SI6969DQ-T1-E3 Applications

  • Suitable for 12V power switching.
  • Ideal for battery management circuits.
  • Used in low-voltage power distribution.
  • Applications requiring dual P-channel FETs.

SI6969DQ-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI6969DQ-T1-E3?

The drain-source voltage (Vdss) is 12V.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 34mOhm at 4.6A and 4.5V.

What package type is the SI6969DQ-T1-E3 supplied in?

It is supplied in an 8-TSSOP package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is the SI6969DQ-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

Home
Account

Categories