SI6968BEDQ-T1-GE3 The Vishay Dale SI6968BEDQ-T1-GE3 is a dual N-channel MOSFET featuring TrenchFET power MOSFET technology and ESD protection. It offers a 20V drain-source voltage and a 6.5A continuous drain current.
Mfr Part #:

SI6968BEDQ-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI6968BEDQ-T1-GE3 is a dual N-channel MOSFET featuring TrenchFET power MOSFET technology and ESD protection. It offers a 20V drain-source voltage and a 6.5A continuous drain current.
✓ Total Stock: 919 pcs
$ Price Range: $0.99

SI6968BEDQ-T1-GE3 Available from 1 distributor

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SI6968BEDQ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI6968BEDQ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI6968BEDQ-T1-GE3 is a dual N-channel MOSFET designed with TrenchFET power MOSFET technology, providing enhanced performance and efficiency. This device includes integrated ESD protection, rated at 3000V.

 

Key electrical characteristics include a maximum drain-source voltage (Vds) of 20V and a continuous drain current (ID) of 6.5A at 25°C. The on-state resistance (RDS(on)) is a maximum of 0.022 Ohms at 6.5A and 4.5V Vgs, and 0.030 Ohms at 2.5V Vgs. The gate charge (Qg) is typically 12nC at 4.5V Vgs.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is supplied in an 8-TSSOP package suitable for surface mounting. The common drain configuration and logic-level gate feature make it suitable for various power management applications.

 

Material categorization indicates it is lead (Pb)-free and halogen-free. The device is designed for applications requiring efficient power switching and protection.

SI6968BEDQ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI6968BEDQ-T1-GE3 Dual N-Channel 2.5 V (G-S) MOSFET, Common Drain, ESD Protection
Subcategory: Dual N-Channel

SI6968BEDQ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI6968BEDQ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI6968BEDQ-T1-GE3 Features

  • Dual N-Channel TrenchFET Power MOSFETs
  • Integrated ESD protection up to 3000 V
  • 20V Drain-Source Voltage rating
  • 6.5A Continuous Drain Current
  • Logic Level Gate operation

SI6968BEDQ-T1-GE3 Applications

  • Suitable for power management circuits
  • Ideal for applications requiring ESD protection
  • Used in systems needing low on-resistance
  • Designed for surface mount applications

SI6968BEDQ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI6968BEDQ-T1-GE3?

The maximum drain-source voltage (Vds) is 20V.

What is the continuous drain current of the SI6968BEDQ-T1-GE3 at 25°C?

The continuous drain current is 6.5A at 25°C.

What is the typical gate charge for the SI6968BEDQ-T1-GE3?

The typical gate charge (Qg) is 12nC at 4.5V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI6968BEDQ-T1-GE3 supplied in?

It is supplied in an 8-TSSOP package.

Does the SI6968BEDQ-T1-GE3 have ESD protection?

Yes, it is ESD protected up to 3000V.

What is the on-state resistance at VGS = 4.5V?

The maximum on-state resistance is 0.022 Ohms at 6.5A and 4.5V Vgs.

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