| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
512,181 pcs
|
512181 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
27,000 pcs
|
27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6968BEDQ-T1-E3 is a dual N-channel MOSFET designed for power management applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (ID) of up to 5.2A at 25°C. The MOSFET exhibits a low on-resistance (RDS(on)) of 22mOhm at 6.5A and 4.5V Vgs, and a typical gate charge (Qg) of 12nC.
This device features common drain configuration and ESD protection up to 3000V. It operates within a temperature range of -55°C to 150°C. The SI6968BEDQ-T1-E3 is supplied in an 8-TSSOP package suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) ranging from 0.6V to 1.6V and a gate-body leakage of ±200nA. The zero gate voltage drain current is 1μA at 20V Vds. Thermal performance is supported by a junction-to-ambient thermal resistance of 83°C/W at t <= 10s and 120°C/W steady state.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-TSSOP surface-mount package.
-55°C to 150°C.
6.5A at 25°C ambient.
22mOhm maximum.
Yes, up to 3000V.
0.6V to 1.6V.