| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Tape & Reel |
The Vishay Siliconix SI6966DQ-T1-E3 is a dual N-Channel MOSFET array designed for various electronic applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 4A at 25°C. The MOSFET array exhibits a low on-resistance of 30mOhm at 4.5A and 4.5V gate-source voltage, with a gate charge of 20nC at 4.5V.
This component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 830mW. It is designed with a logic level gate, making it suitable for low-voltage applications. The device is packaged in an 8-TSSOP (0.173", 4.40mm Width) surface mount configuration, supplied on Tape & Reel (TR).
The SI6966DQ-T1-E3 is part of the TrenchFET® series, known for its efficiency and performance. Its dual N-channel configuration offers flexibility in circuit design. The RoHS status is compliant, and the Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 20V.
The continuous drain current (Id) is 4A at 25°C.
The on-resistance (Rds(on)) is a maximum of 30mOhm at 4.5A and 4.5V.
The operating temperature range is -55°C to 150°C.
It is supplied in an 8-TSSOP package suitable for surface mounting.
Yes, the RoHS status is compliant.