| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6954ADQ-T1-GE3 is a dual N-channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 3.1A. The device exhibits a low on-state resistance (Rds(on)) of 53mOhm at a gate-source voltage (Vgs) of 10V and ID of 3.4A, and 75mOhm at Vgs of 4.5V and ID of 2.9A. It also features a gate threshold voltage (Vgs(th)) of 1V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an 8-TSSOP package, suitable for surface mounting. The dual N-channel configuration and logic-level gate make it versatile for various circuit designs. Key electrical parameters include a gate charge of 81nC typical and a power dissipation of 830mW.
Key specifications include a typical turn-on delay of 12ns and a fall time of 8ns, contributing to efficient switching performance. The device is also characterized by its TrenchFET technology, offering enhanced performance and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
It is available in an 8-TSSOP package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current is 3.4A at 25°C and 2.7A at 70°C.
The maximum gate threshold voltage is 1V at 250µA drain current.
The drain-source on-resistance is 53mΩ at 10V gate drive and 3.4A, and 75mΩ at 4.5V gate drive and 2.9A.
Typical turn-on delay is 12ns, rise time 10ns, turn-off delay 23ns, fall time 8ns.