| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
106,020 pcs
|
106020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale Si6954ADQ is an N-Channel MOSFET designed for battery switch applications, featuring TrenchFET® Power MOSFETs rated for 2.5V. This device offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 3.1A at 25°C. The on-state drain-source resistance (Rds(on)) is a maximum of 53mΩ at Vgs = 10V and Id = 3.4A.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1V (min) at 250µA and a total gate charge (Qg) of 16nC at 10V. The MOSFET operates within a junction and storage temperature range of -55°C to 150°C. It is packaged in an 8-TSSOP surface-mount configuration.
This component is suitable for applications requiring efficient power switching. Its halogen-free construction and RoHS3 compliance make it a consideration for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The continuous drain current is 3.1A at 25°C.
The Rds(on) is a maximum of 53mΩ at Vgs = 10V and Id = 3.4A.
The operating junction and storage temperature range is -55°C to 150°C.
The SI6954ADQ-T1-E3 is supplied in an 8-TSSOP package.
Yes, the SI6954ADQ-T1-E3 is halogen-free.