SI6933DQ-T1-E3 The Vishay Dale SI6933DQ-T1-E3 is a dual P-channel MOSFET featuring 30V drain-source voltage and 45mOhm on-resistance. It is housed in an 8-TSSOP surface mount package.
Mfr Part #:

SI6933DQ-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI6933DQ-T1-E3 is a dual P-channel MOSFET featuring 30V drain-source voltage and 45mOhm on-resistance. It is housed in an 8-TSSOP surface mount package.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SI6933DQ-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 1107 On Request On Request

SI6933DQ-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI6933DQ-T1-E3 Description

Short technical summary and product information.

The SI6933DQ-T1-E3 from Vishay Dale is a dual P-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a low on-resistance (Rds On) of 45mOhm at 3.5A and 10V gate-source voltage. The gate charge (Qg) is a maximum of 30nC at 10V, with a gate threshold voltage (Vgs(th)) of 1V at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a power rating of 1W. It features a logic level gate, making it suitable for low-voltage control applications. The technology employed is MOSFET (Metal Oxide).

 

The component is packaged in an 8-TSSOP (0.173", 4.40mm Width) and is designed for surface mounting. Its RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.

SI6933DQ-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI6933DQ-T1-E3 Dual P-Channel MOSFET
Subcategory: Arrays

SI6933DQ-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI6933DQ-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI6933DQ-T1-E3 Features

  • Dual P-Channel MOSFET technology.
  • 30V drain-to-source voltage rating.
  • Low 45mOhm on-resistance.
  • Logic level gate feature.
  • Surface mount 8-TSSOP package.

SI6933DQ-T1-E3 Applications

  • Suitable for low-voltage switching.
  • Used in power management circuits.
  • Ideal for battery-powered devices.
  • Component in control modules.

SI6933DQ-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI6933DQ-T1-E3?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the on-resistance of the SI6933DQ-T1-E3?

The maximum on-resistance is 45mOhm at 3.5A drain current and 10V gate drive.

What is the operating temperature range of the SI6933DQ-T1-E3?

The operating junction temperature range is -55°C to 150°C.

What package does the SI6933DQ-T1-E3 come in?

It comes in an 8-TSSOP surface mount package.

Does the SI6933DQ-T1-E3 have a logic level gate?

Yes, it features a logic level gate with a maximum threshold voltage of 1V.

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