| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The SI6926DQ from Vishay Dale is a Dual N-Channel MOSFET utilizing an advanced PowerTrench process. This component is optimized for power management applications and supports a wide gate drive voltage range from 2.5V to 12V.
Key electrical specifications include a maximum drain-source voltage of 20V and a continuous drain current of 5.5A. The on-resistance (RDS(ON)) is typically 0.021 Ohms at a gate-source voltage of 4.5V. This MOSFET is designed for ruggedness and efficient power control.
It is suitable for various power management tasks where reliable switching and low on-resistance are critical. The device is available in a surface-mount package, facilitating integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 20V.
The continuous drain current is 5.5A.
The typical on-resistance is 0.021 Ohm at VGS = 4.5V.
The gate drive voltage range is 2.5V to 12V.
The mounting type is surface mount.