SI6926ADQ-T1-GE3 The Vishay Dale SI6926ADQ-T1-GE3 is a dual N-channel MOSFET with a 20V drain-source voltage and 4.1A continuous drain current. It features a low Rds(on) of 30mOhm at 4.5A, 4.5V.
Mfr Part #:

SI6926ADQ-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI6926ADQ-T1-GE3 is a dual N-channel MOSFET with a 20V drain-source voltage and 4.1A continuous drain current. It features a low Rds(on) of 30mOhm at 4.5A, 4.5V.
✓ Total Stock: 121,029 pcs
$ Price Range: $0.99

SI6926ADQ-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
82,182 pcs
82182 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
37,020 pcs
37020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,827 pcs
1827 pcs On Request 1 On Request On Request 14+ On Request On Request

SI6926ADQ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI6926ADQ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI6926ADQ-T1-GE3 is a dual N-channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 4.1A at 25°C. The MOSFET exhibits a low on-state resistance (Rds(on)) of 30mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 4.5A.

 

This device operates within a temperature range of -55°C to 150°C. It is packaged in an 8-TSSOP (0.173", 4.40mm Width) surface-mount package. The MOSFET features a logic level gate and is halogen-free.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1V maximum at 250µA, a gate charge (Qg) of 10.5nC maximum at 4.5V, and a power dissipation of 830mW at 25°C. The device is suitable for applications requiring efficient switching and low on-resistance.

SI6926ADQ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si6926ADQ Dual N-Channel 2.5-V MOSFET
Subcategory: Dual N-Channel

SI6926ADQ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI6926ADQ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI6926ADQ-T1-GE3 Features

  • Dual N-Channel 2.5-V MOSFET.
  • 20V Drain-Source Voltage.
  • 4.1A Continuous Drain Current.
  • Low 30mOhm Rds(on) at 4.5V.
  • Halogen-free and RoHS3 compliant.

SI6926ADQ-T1-GE3 Applications

  • Suitable for power switching.
  • Ideal for battery-powered devices.
  • Used in portable electronics.
  • Efficient load switching applications.

SI6926ADQ-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI6926ADQ-T1-GE3?

The maximum drain-source voltage is 20V.

What is the continuous drain current rating?

The continuous drain current is 4.5A at TA = 25°C and 3.6A at TA = 70°C.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package does the SI6926ADQ-T1-GE3 come in?

It comes in an 8-TSSOP surface-mount package.

What is the maximum on-resistance at 4.5V gate drive?

The maximum on-resistance is 30mOhm at VGS = 4.5V and ID = 4.5A.

Is this device halogen-free?

Yes, the device is halogen-free.

Home
Account

Categories