| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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185 pcs
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185 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6926ADQ-T1-E3 is a dual N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 20V and can handle a continuous drain current of up to 4.1A. The Rds(on) is specified at a maximum of 30mOhm at 4.5A and 4.5V gate-source voltage.
This MOSFET is housed in an 8-TSSOP package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device also offers a gate threshold voltage of 1V at 250µA and a gate charge of 10.5nC at 4.5V.
Key electrical characteristics include a typical forward transconductance of 26S and a typical diode forward voltage of 0.6V. The component is designed with a logic level gate feature, enhancing its usability in different circuit designs. Its compact 8-TSSOP package makes it suitable for space-constrained applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage for the SI6926ADQ-T1-E3 is 20V.
The continuous drain current is 4.1A.
The Rds(on) is a maximum of 30mOhm at 4.5A and 4.5V.
The SI6926ADQ-T1-E3 is available in an 8-TSSOP package.
The operating temperature range is -55°C to 150°C (TJ).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is MSL 1.