BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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120,533 pcs
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120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Vishay SI6925DQ-T1-E3 is a Dual N-Channel MOSFET with a 2.5V (G-S) rating, housed in a compact TSSOP-8 package. This device is designed for efficient power management applications.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 3.4A at 25°C. The MOSFET exhibits low on-state resistance (RDS(on)), with a maximum of 0.05Ω at VGS = 4.5V. Its typical gate charge (Qg) is 6 nC, contributing to efficient switching performance.
The operating junction and storage temperature range is -55°C to 150°C, with a maximum junction-to-ambient thermal resistance of 125°C/W. The TSSOP-8 package is suitable for surface-mount designs, offering a small footprint for space-constrained applications.
| Qty | Low | High |
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| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the SI6925DQ-T1-E3 is 20V.
The continuous drain current (ID) at 25°C for the SI6925DQ-T1-E3 is 3.4A.
The maximum on-resistance (RDS(on)) at VGS = 4.5V for the SI6925DQ-T1-E3 is 0.05Ω.
The SI6925DQ-T1-E3 is supplied in a TSSOP-8 package.
The operating junction and storage temperature range for the SI6925DQ-T1-E3 is -55°C to 150°C.