| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI6925ADQ-T1-GE3 from Vishay Dale is a dual N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and can handle a continuous current of 3.3A. The MOSFET has a low on-resistance of 45mOhm at 3.9A and 4.5V, with a gate charge (Qg) of 6nC at 4.5V. Its gate threshold voltage (Vgs(th)) is a maximum of 1.8V at 250µA, and it includes a Logic Level Gate feature.
This device operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 800mW. The technology used is MOSFET (Metal Oxide). The SI6925ADQ-T1-GE3 is housed in an 8-TSSOP package, suitable for surface mounting. Its configuration consists of two N-Channel MOSFETs.
This component is classified under Transistors - FETs, MOSFETs - Arrays. It is designed for applications requiring efficient switching and power management. The RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20 volts.
The component uses an 8-TSSOP surface mount package with a 0.173-inch width.
The operating junction temperature range is -55 degrees Celsius to 150 degrees Celsius.
The maximum on-resistance is 45 milliohms when tested at 3.9 amperes and 4.5 volts.
The maximum gate charge is 6 nanocoulombs at a 4.5 volt gate drive.
The gate threshold voltage is 1.8 volts maximum when tested at 250 microamperes.