| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Siliconix SI6925ADQ-T1 is a dual N-channel MOSFET designed for various electronic applications. It offers a Drain-Source Voltage (VDS) of 20V and a Continuous Drain Current (ID) of up to 3.9A at 25°C.
Key electrical characteristics include a Gate-Source Voltage (VGS) range of ±12V and a low Drain-Source On-Resistance (rDS(on)) as low as 0.035 Ω at VGS = 4.5V. The device also features a Gate-Threshold Voltage (VGS(th)) between 0.6V and 1.8V.
Packaged in a compact TSSOP-8 configuration, this MOSFET is suitable for surface-mount designs. Its operating junction and storage temperature range is -55°C to 150°C, with a junction-to-ambient thermal resistance of 110 °C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the SI6925ADQ-T1 is 20V.
The continuous drain current (ID) at 25°C for the SI6925ADQ-T1 is 3.9A.
The SI6925ADQ-T1 is supplied in a TSSOP-8 package.
The operating junction and storage temperature range for the SI6925ADQ-T1 is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.