| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,020 pcs
|
22020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,340 pcs
|
2340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
123 pcs
|
123 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
72 pcs
|
72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6913DQ-T1-GE3 is a Dual P-Channel MOSFET designed for 12V applications. It offers a continuous drain current of up to 5.8A at 25°C and a low on-resistance of 21mOhm at a gate-source voltage of 4.5V.
This MOSFET is suitable for load switch and battery switch applications. It operates within a temperature range of -55°C to 150°C and is housed in an 8-TSSOP package. The device features a logic level gate, making it compatible with lower voltage control signals.
Key electrical characteristics include a drain-source voltage of 12V and a gate-source voltage range of ±8V. The maximum power dissipation is 1.14W at 25°C ambient temperature. Thermal resistance from junction to ambient is rated at 110°C/W for transient conditions and 150°C/W for steady state.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 12V.
The maximum continuous drain current is 5.8A at 25°C.
The Rds On is 21mOhm at 5.8A and 4.5V.
The operating temperature range is -55°C to 150°C.
It is in an 8-TSSOP package.