| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,349 pcs
|
2349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6562DQ-T1-E3 is an N and P-Channel MOSFET with a maximum drain-to-source voltage of 20V. It offers a low on-resistance of 30mOhm at 4.5A and 4.5V, with a gate charge of 25nC at 4.5V. The gate threshold voltage is a maximum of 600mV at 250µA. This component is suitable for surface mounting and comes in an 8-TSSOP package, dissipating up to 1W of power. It features a logic level gate, making it versatile for various circuit designs.
This MOSFET is ideal for applications requiring efficient switching and power management. Its N and P-channel configuration allows for flexible circuit design, such as complementary pairs or specific load switching scenarios. The surface mount package ensures compatibility with automated assembly processes, while the 8-TSSOP form factor provides a compact solution for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-TSSOP surface mount package.
30mOhm maximum at 4.5A, 4.5V (Vgs).
25nC maximum at 4.5V.
600mV maximum at 250µA drain current.
1W.
Yes, it features a logic level gate.