| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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49,020 pcs
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49020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,574 pcs
|
2574 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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147 pcs
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147 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6562CDQ-T1-GE3 is a versatile N and P-channel MOSFET designed for applications requiring efficient switching. It offers a 20V drain-source breakdown voltage and a maximum continuous drain current of 6.7A for the N-channel and 6.1A for the P-channel.
Key electrical characteristics include a low on-state resistance of 22mOhm at 5.7A and 4.5V, and a gate threshold voltage of 1.5V maximum at 250µA. The MOSFET also features a gate charge of 23nC at 10V and an input capacitance of 850pF at 10V.
This device is suitable for load switches and DC/DC converters. It operates within a temperature range of -55°C to 150°C (TJ) and is supplied in a compact 8-TSSOP surface mount package.
The SI6562CDQ-T1-GE3 is designed with TrenchFET technology and is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20 V minimum at VGS = 0 V, ID = 250 µA.
It is available in an 8-TSSOP (8-pin Thin Shrink Small Outline Package) for surface mount assembly.
The junction temperature range is -55°C to 150°C.
The maximum on-state resistance is 22 mOhm at ID = 5.7 A, VGS = 4.5 V.
The continuous drain current is 6.7 A at TC = 25°C.
Yes, it features a logic level gate (FET feature: Logic Level Gate).
The maximum gate threshold voltage is 1.5 V at ID = 250 µA.