| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
103 pcs
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103 pcs | On Request | 1 | On Request | On Request | 1003+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI6466ADQ-T1-GE3 from Vishay Siliconix is an N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 6.8A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 14mOhm at 8.1A and 4.5V, and a gate threshold voltage (Vgs(th)) of 450mV at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in an 8-TSSOP package, suitable for surface mounting. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). The part number SI6466ADQ-T1-GE3 is also available under the DK Part Number SI6466ADQ-T1-GE3-ND.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are treated with low confidence due to lack of verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 6.8A at 25°C ambient temperature.
The maximum on-resistance (Rds On) is 14mOhm at Id = 8.1A and Vgs = 4.5V.
It comes in an 8-TSSOP (0.173", 4.40mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 450mV at Id = 250µA.
The maximum gate charge (Qg) is 27nC at Vgs = 5V.