SI6463DQ The On Semiconductor SI6463DQ is a P-Channel MOSFET designed for various applications. It features a 20V drain-to-source voltage and a maximum continuous drain current of 8.8A.
Mfr Part #:

SI6463DQ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SI6463DQ is a P-Channel MOSFET designed for various applications. It features a 20V drain-to-source voltage and a maximum continuous drain current of 8.8A.
✓ Total Stock: 2,500 pcs
$ Price Range: $0.99

SI6463DQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

SI6463DQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI6463DQ Description

Short technical summary and product information.

The SI6463DQ from On Semiconductor is a P-Channel MOSFET belonging to the single FET category. This device is designed for surface mount applications and comes in an 8-TSSOP package. Key electrical characteristics include a drain-to-source voltage (Vdss) of 20V and a maximum continuous drain current (Id) of 8.8A at ambient temperature. The on-resistance (Rds On) is specified as a maximum of 12.5mOhm at 8.8A and 4.5V gate-to-source voltage. It operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET utilizes Metal Oxide technology and has a gate threshold voltage (Vgs(th)) of 1.5V at 250µA. The input capacitance (Ciss) is a maximum of 5045 pF at 10V, and the gate charge (Qg) is a maximum of 66 nC at 4.5V. The maximum gate-to-source voltage is ±12V. The power dissipation is limited to 600mW at ambient temperature. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI6463DQ Quick Information

Product Type: MOSFET
Canonical Name: SI6463DQ P-Channel MOSFET
Subcategory: Single

SI6463DQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI6463DQ Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI6463DQ Features

  • P-Channel MOSFET technology.
  • 20V drain-to-source voltage.
  • 8.8A continuous drain current.
  • Low 12.5mOhm on-resistance.
  • Surface mount 8-TSSOP package.

SI6463DQ Applications

  • Power switching applications.
  • Load management circuits.
  • Battery powered devices.
  • General purpose switching.

SI6463DQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI6463DQ?

The drain-to-source voltage (Vds) for the SI6463DQ is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 8.8A at ambient temperature.

What is the on-resistance of the SI6463DQ?

The Rds On is a maximum of 12.5mOhm at 8.8A and 4.5V gate-to-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI6463DQ available in?

The SI6463DQ is available in an 8-TSSOP package for surface mounting.

Is the SI6463DQ RoHS compliant?

Yes, the SI6463DQ is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

Home
Account

Categories