| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,914 pcs
|
2914 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI6463BDQ-T1-GE3 is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in an 8-TSSOP package.
The device offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 6.2A at a nominal temperature. Its on-resistance (Rds On) is a maximum of 15mOhm at 7.4A and 4.5V gate-source voltage. The gate charge (Qg) is a maximum of 60nC at 5V gate-source voltage, and the gate threshold voltage (Vgs(th)) is a maximum of 800mV at 250µA drain current.
Key electrical characteristics include a P-Channel FET type and a maximum Rds On of 15mOhm. The component is suitable for various electronic circuits requiring efficient switching and power management. Its surface mount package facilitates integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
6.2A.
15mOhm at 7.4A, 4.5V.
60nC at 5V.
800mV at 250µA.
8-TSSOP.
Surface Mount.