| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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248 pcs
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248 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6463BDQ-T1-E3 is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in an 8-TSSOP package.
Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 6.2A at ambient temperature. The on-resistance (Rds On) is a maximum of 15mOhm at 7.4A and 4.5Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 800mV at 250µA, and the gate charge (Qg) is 60nC at 5Vgs.
This MOSFET is suitable for various power management applications where a P-channel enhancement mode device is required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI6463BDQ-T1-E3 is 20V.
The continuous drain current (Id) for the SI6463BDQ-T1-E3 is 6.2A at ambient temperature.
The maximum on-resistance (Rds On) for the SI6463BDQ-T1-E3 is 15mOhm at 7.4A and 4.5Vgs.
The SI6463BDQ-T1-E3 is available in an 8-TSSOP package.
The SI6463BDQ-T1-E3 is designed for surface mount.
The RoHS status of the SI6463BDQ-T1-E3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI6463BDQ-T1-E3 is 1 Unlimited.