| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,271 pcs
|
2271 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,187 pcs
|
2187 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6435ADQ-T1-E3 is a P-channel MOSFET with a metal oxide technology, suitable for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current of 4.7A at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 30mOhm at 5.5A and 10V, and a gate threshold voltage (Vgs(th)) of 1V at 250µA. The gate charge (Qg) is a maximum of 20nC at 5V.
This MOSFET is packaged in an 8-TSSOP (0.173", 4.40mm Width) and is designed for surface mount installation. It is specified as RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
4.7A at ambient temperature.
30mOhm maximum at 5.5A drain current and 10V gate-source voltage.
1V maximum at 250µA drain current.
20nC maximum at 5V gate-source voltage.
8-TSSOP (0.173", 4.40mm Width) surface mount package.
P-Channel.