| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
874 pcs
|
874 pcs | On Request | 1 | On Request | On Request | 1042+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6433BDQ-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 4A at 25°C.
Key electrical characteristics include a maximum power dissipation of 1.05W (Ta), a maximum Rds On of 40mOhm at 4.8A and 4.5V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 1.5V at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in an 8-TSSOP package, measuring 0.173 inches (4.40mm) in width, and is suitable for surface mounting. The gate charge (Qg) is a maximum of 15 nC at 4.5V Vgs, and the maximum gate-source voltage (Vgs) is ±8V. It is supplied on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 12V.
The continuous drain current is 4A at 25°C ambient temperature.
The maximum on-resistance is 40mOhm at Vgs=4.5V and Id=4.8A.
The maximum gate threshold voltage is 1.5V at Id=250µA.
The junction temperature range is -55°C to 150°C.
The device is available in an 8-TSSOP surface mount package.
The maximum gate charge is 15nC at Vgs=4.5V.