| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,020 pcs
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10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI6423DQ-T1-GE3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for low-voltage switching applications and offers a drain-source voltage rating of 12V and a continuous drain current of 8.2A.
Key electrical characteristics include a maximum gate-source voltage of ±8V and a gate threshold voltage of 800mV at 400µA. These parameters make it suitable for use in power management and load switching circuits where a P-Channel device is required.
The device is housed in an 8-TSSOP surface-mount package, which provides a compact footprint for space-constrained designs. The package is compatible with standard SMD assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12 V.
±8 V.
800 mV at 400 µA.