SI6423DQ-T1-E3 The Vishay Dale SI6423DQ-T1-E3 is a P-Channel MOSFET with a 12V drain-source voltage and 8.2A continuous drain current. It is housed in an 8-TSSOP package.
Mfr Part #:

SI6423DQ-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI6423DQ-T1-E3 is a P-Channel MOSFET with a 12V drain-source voltage and 8.2A continuous drain current. It is housed in an 8-TSSOP package.
✓ Total Stock: 11,260 pcs
$ Price Range: $0.99

SI6423DQ-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,020 pcs
10020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,240 pcs
1240 pcs On Request 1 On Request On Request 21+ On Request On Request

SI6423DQ-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SI6423DQ-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI6423DQ-T1-E3 is a P-Channel MOSFET designed for various applications. It features a maximum drain-source voltage of 12V and a continuous drain current of 8.2A at 25°C ambient temperature.

 

The MOSFET offers a low on-resistance of 8.5mOhm at a gate-source voltage of 4.5V and a drain current of 9.5A. The gate charge is 110 nC at 5V. It operates within a temperature range of -55°C to 150°C.

 

This device is suitable for load switching applications. It is packaged in an 8-TSSOP (0.173", 4.40mm Width) with a surface mount type. The maximum power dissipation is 1.05W at 25°C.

 

The SI6423DQ-T1-E3 is RoHS3 compliant and has an MSL rating of 1.

SI6423DQ-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si6423DQ P-Channel 12V MOSFET
Subcategory: P-Channel

SI6423DQ-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI6423DQ-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI6423DQ-T1-E3 Features

  • P-Channel 12V MOSFET
  • 8.2A continuous drain current
  • 8.5mOhm max Rds On
  • Surface mount 8-TSSOP package
  • Operating temperature -55°C to 150°C

SI6423DQ-T1-E3 Applications

  • Suitable for load switching applications.
  • Used in power management circuits.
  • Ideal for low-voltage battery-powered devices.
  • Applicable in DC-DC converter designs.

SI6423DQ-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI6423DQ-T1-E3?

The drain-source voltage is 12V.

What is the maximum continuous drain current?

The maximum continuous drain current is 8.2A at 25°C.

What is the on-resistance of this MOSFET?

The on-resistance is a maximum of 8.5mOhm at a drain current of 9.5A and gate-source voltage of 4.5V.

What is the package type for the SI6423DQ-T1-E3?

The part is supplied in an 8-TSSOP package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is this MOSFET RoHS compliant?

The RoHS status is RoHS3 Compliant.

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