| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,020 pcs
|
25020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
884 pcs
|
884 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI6415DQ-T1-GE3 is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V. It is designed for surface mount applications and comes in an 8-TSSOP package.
This MOSFET offers a continuous drain current of 6.4A at ambient temperature and a maximum on-resistance (Rds On) of 19mOhm at 6.5A and 10V Vgs. The gate charge (Qg) is 70 nC at 10V Vgs, and the gate-to-source voltage (Vgs) maximum is ±20V. The gate threshold voltage (Vgs(th)) is a minimum of 1V at 250µA.
With a maximum power dissipation of 1.5W (Ta) and an operating temperature range of -55°C to 150°C (TJ), this component is suitable for various electronic designs. The technology used is MOSFET (Metal Oxide).
Key specifications include a 30V Vdss, 6.4A continuous drain current, and a low 19mOhm Rds On. The 8-TSSOP package and surface mount capability make it versatile for integration into compact electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI6415DQ-T1-GE3 is 30V.
The continuous drain current (Id) for the SI6415DQ-T1-GE3 is 6.4A at ambient temperature.
The maximum on-resistance (Rds On) is 19mOhm when the drain current is 6.5A and the gate-source voltage is 10V.
The operating temperature range for the SI6415DQ-T1-GE3 is -55°C to 150°C (TJ).
The SI6415DQ-T1-GE3 is in an 8-TSSOP package.
The SI6415DQ-T1-GE3 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.