| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,494 pcs
|
1494 pcs | On Request | 1 | On Request | On Request | 1313+ | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI6415DQ-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.5A at ambient temperature.
The MOSFET has a low on-resistance (Rds On) of 19mOhm at a gate-source voltage (Vgs) of 10V, ensuring efficient power handling. The gate threshold voltage (Vgs(th)) is 1V minimum at 250µA, and the maximum gate-to-source voltage is ±20V.
Packaged in an 8-TSSOP, this surface-mount device operates within a temperature range of -55°C to 150°C. Its maximum power dissipation is 1.5W at ambient temperature. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
Key electrical characteristics include a gate charge (Qg) of 70nC at 10V and a drive voltage range of 4.5V to 10V. This MOSFET is suitable for applications requiring efficient switching and power control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
6.5A.
19mOhm at 6.5A and 10V gate drive.
1V minimum at 250µA.
-55°C to 150°C.
8-TSSOP surface mount package.
70nC at 10V.