| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,953 pcs
|
8953 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
2,846 pcs
|
2846 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI5936DU-T1-GE3 is a dual N-channel MOSFET array from Vishay Dale. It is designed for applications requiring two independent MOSFETs in a compact package.
Key electrical specifications include a drain-source voltage (Vdss) of 30 V, a maximum gate-source voltage of ±20 V, and a continuous drain current of 6 A at both case temperature (Tc=25°C) and ambient temperature (Ta=25°C). These ratings make it suitable for moderate power switching and load management.
The device is housed in a PowerPAK ChipFET package, which is a surface-mount package optimized for thermal performance and space efficiency. The dual configuration allows for reduced board space and simplified layout in designs requiring multiple MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
6 A at both case temperature (Tc=25°C) and ambient temperature (Ta=25°C).
±20 V.