| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
212,706 pcs
|
212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,450 pcs
|
5450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,980 pcs
|
1980 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5935CDC-T1-GE3 is a dual P-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 20V and can handle a continuous current of 4A, with a maximum power dissipation of 3.1W.
Key electrical characteristics include a maximum on-resistance (Rds On) of 100mOhm when measured at 3.1A and 4.5V, and a gate charge (Qg) of 11nC maximum at 5V. The gate threshold voltage (Vgs(th)) is 1V maximum at 250µA. Input capacitance (Ciss) is rated at 455pF maximum at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is configured as 2 P-Channel devices within a single package. The technology employed is MOSFET (Metal Oxide).
The SI5935CDC-T1-GE3 is supplied in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™ footprint, suitable for surface mounting. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the SI5935CDC-T1-GE3 is 20V.
The SI5935CDC-T1-GE3 MOSFET has a continuous current rating of 4A.
The maximum on-resistance (Rds On) for the SI5935CDC-T1-GE3 is 100mOhm, measured at 3.1A and 4.5V.
The operating temperature range for the SI5935CDC-T1-GE3 is -55°C to 150°C (TJ).
The SI5935CDC-T1-GE3 is supplied in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™.
Yes, the SI5935CDC-T1-GE3 is RoHS3 compliant.