| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
242 pcs
|
242 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI5935CDC-T1-E3 is a dual P-Channel MOSFET from Vishay Dale, designed for efficient power management in compact circuits. It features a maximum drain-source voltage of 20V and a continuous drain current of 4A, with a low on-resistance of 100mOhm at 3.1A and 4.5V gate drive. The device has a maximum power dissipation of 3.1W.
The MOSFET exhibits a gate charge of 11nC at 5V and an input capacitance of 455pF at 10V, enabling fast switching speeds. The threshold voltage is 1V at 250µA. It operates over a junction temperature range of -55°C to 150°C.
Housed in a 1206-8 ChipFET surface mount package, this component is suitable for space-constrained applications. The dual configuration integrates two P-Channel MOSFETs in a single package, saving board space and simplifying layout. Typical applications include load switching, power management in portable devices, and DC-DC converter circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
1206-8 ChipFET surface mount package.
-55°C to 150°C.
4A.
100 mOhm at 3.1A, 4.5V.
1V at 250µA.
2 P-Channel (Dual).