| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,500 pcs
|
44500 pcs | On Request | 1 | On Request | On Request | 0623+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5915DC-T1-E3 is a dual P-channel MOSFET belonging to the Transistors - FETs, MOSFETs - Arrays category. This component is designed for surface mount applications and comes in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™ size.
Key electrical characteristics include a drain-to-source voltage (Vdss) of 8V and a continuous current rating of 3.4A. The on-resistance (Rds On) is a maximum of 70mOhm at 3.4A and 4.5V, with a gate charge (Qg) of 9nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 450mV at 250µA, and it features a logic level gate.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 1.1W. The technology used is MOSFET (Metal Oxide). The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. Its REACH status is unaffected.
This device is suitable for various electronic designs requiring efficient switching and power management in a compact surface mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 8V.
The continuous drain current rating is 3.4A.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SMD flat lead package, specifically the 1206-8 ChipFET package.
Yes, it features a logic-level gate.
The maximum on-resistance is 70mOhm at 3.4A and 4.5V gate drive.
The maximum gate threshold voltage is 450mV at 250µA.