SI5913DC-T1-GE3 The Vishay Dale SI5913DC-T1-GE3 is a P-Channel MOSFET designed for low-power switching applications. It features a 20V drain-to-source voltage and 4A continuous drain current.
Mfr Part #:

SI5913DC-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI5913DC-T1-GE3 is a P-Channel MOSFET designed for low-power switching applications. It features a 20V drain-to-source voltage and 4A continuous drain current.
✓ Total Stock: 1,227 pcs
$ Price Range: $0.99

SI5913DC-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,227 pcs
1227 pcs On Request 1 On Request On Request On Request On Request On Request

SI5913DC-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI5913DC-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI5913DC-T1-GE3 is a P-Channel MOSFET with an integrated Schottky diode, suitable for DC/DC converters and asynchronous rectification applications. It offers a drain-to-source voltage of 20V and a continuous drain current of 4A at 25°C case temperature. The MOSFET exhibits a maximum on-resistance of 84mOhm at a gate-source voltage of 10V and a drain current of 3.7A.

 

This component operates within a temperature range of -55°C to 150°C. It is housed in a compact 1206-8 ChipFET™ package, designed for surface mounting. The device also features a gate charge of 12 nC at 10V and an input capacitance of 330 pF at 10V.

 

The SI5913DC-T1-GE3 is classified as RoHS3 Compliant and Halogen-free. Its small footprint and integrated Schottky diode make it a versatile choice for designs requiring space efficiency and reliable performance in low-power switching applications.

SI5913DC-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si5913DC P-Channel 20V 4A MOSFET with Schottky Diode
Subcategory: P-Channel

SI5913DC-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI5913DC-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI5913DC-T1-GE3 Features

  • P-Channel MOSFET with Schottky diode.
  • 20V drain-to-source voltage rating.
  • 4A continuous drain current.
  • Low on-resistance of 84mOhm.
  • Compact 1206-8 ChipFET package.

SI5913DC-T1-GE3 Applications

  • DC/DC converter circuits
  • Asynchronous rectification applications
  • Low-power load switching
  • Battery-powered device power management

SI5913DC-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source breakdown voltage of the SI5913DC-T1-GE3?

The drain-to-source breakdown voltage is 20V.

What is the maximum continuous drain current for the SI5913DC-T1-GE3?

The maximum continuous drain current is 4A at 25°C case temperature.

What is the typical on-resistance of the SI5913DC-T1-GE3?

The maximum on-resistance is 84mOhm at a gate-source voltage of 10V and a drain current of 3.7A.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What package type is the SI5913DC-T1-GE3 in?

It is in an 8-SMD, Flat Lead package, specifically a 1206-8 ChipFET™.

Is the SI5913DC-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Does the SI5913DC-T1-GE3 feature an integrated Schottky diode?

Yes, it features an integrated Schottky diode.

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