| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,477 pcs
|
2477 pcs | On Request | 1 | 1206 | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5908DC-T1-GE3 is a dual N-channel MOSFET designed for applications requiring efficient power switching. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 4.4A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 40mOhm at 4.4A and 4.5V, and a gate threshold voltage (Vgs(th)) of 1V maximum at 250µA. The device also features a gate charge (Qg) of 7.5nC maximum at 4.5V.
This MOSFET is housed in a compact 1206-8 ChipFET™ package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is compliant with RoHS 3 standards and is halogen-free.
Applications include load switching, PA switching, and battery switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.80 | $0.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The continuous drain current is 4.4A at 25°C.
The maximum on-resistance is 40mOhm at 4.4A, 4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
The SI5908DC-T1-GE3 is in a 1206-8 ChipFET™ package.
Yes, the SI5908DC-T1-GE3 is RoHS 3 compliant.
Yes, the SI5908DC-T1-GE3 is halogen-free.