| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
99,000 pcs
|
99000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI5906DU-T1-GE3 is a dual N-channel MOSFET designed for power applications. It offers a drain-source voltage of 30V and a continuous drain current of up to 6A.
Key electrical characteristics include a low on-resistance of 31mOhm at a gate-source voltage of 10V, and a maximum gate charge of 8.6nC. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in a compact PowerPAK ChipFET Dual package, suitable for surface mounting. Its design incorporates TrenchFET technology for enhanced thermal performance and efficiency. The device is also noted as being halogen-free.
Applications include network and system power, as well as DC/DC conversion, where its low on-resistance and efficient switching capabilities are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30V.
The maximum continuous drain current is 6A at 25°C case temperature.
The maximum on-resistance is 31mOhm at 4.8A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is in a PowerPAK ChipFET Dual package.
Yes, it is RoHS3 Compliant.
Yes, it is halogen-free according to IEC 61249-2-21 definition.