| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48,000 pcs
|
48000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5905BDC-T1-E3 is a dual P-Channel MOSFET belonging to the TrenchFET series. It is designed for load switch applications in portable devices. This MOSFET features a drain-source voltage (Vds) of 8V and a continuous drain current (Id) of 4A at 25°C case temperature. The Rds On is specified at a maximum of 80mOhm at 3.3A and 4.5V Vgs.
With a maximum power dissipation of 3.1W at 25°C case temperature, the SI5905BDC-T1-E3 operates within a junction and storage temperature range of -55°C to 150°C. It is housed in a 1206-8 ChipFET package suitable for surface mounting. The device supports logic level gate drive and is compliant with RoHS3 standards. Its compact size and performance characteristics make it suitable for various portable electronic applications requiring efficient power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 8V.
The continuous drain current is 4A.
The Rds On is a maximum of 80mOhm at 3.3A and 4.5V Vgs.
The operating junction and storage temperature range is -55°C to 150°C.
The SI5905BDC-T1-E3 is in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™.
The SI5905BDC-T1-E3 is RoHS3 Compliant.