| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI5903DC-T1-E3 from Vishay Dale is a dual P-channel MOSFET array suitable for various electronic applications. This component features a drain-to-source voltage (Vdss) of 20V and can handle a continuous current of 2.1A. Its on-resistance (Rds On) is specified as a maximum of 155mOhm at 2.1A and 4.5V gate-source voltage, indicating efficient power handling.
Designed with a logic level gate, this MOSFET array is compatible with lower gate drive voltages. The operating temperature range is from -55°C to 150°C (TJ), ensuring reliability in diverse environmental conditions. The component is packaged in an 8-SMD, Flat Lead configuration, specifically a 1206-8 ChipFET™ package, making it suitable for surface mounting.
Key electrical characteristics include a gate charge (Qg) of 6nC at 4.5V and a gate threshold voltage (Vgs(th)) of 600mV at 250µA. The power dissipation is rated at 1.1W. This MOSFET array is designed for applications requiring compact and efficient switching or amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The continuous drain current is 2.1A.
The operating junction temperature range is -55°C to 150°C.
It comes in a 1206-8 ChipFET surface-mount package.
The maximum on-resistance is 155mOhm at 2.1A drain current and 4.5V gate-source voltage.
The maximum gate threshold voltage is 600mV at 250µA drain current.
The maximum total gate charge is 6nC at 4.5V gate-source voltage.