| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,970 pcs
|
7970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5902DC-T1-E3 is a dual N-Channel MOSFET array designed for various electronic applications. It offers a drain-to-source voltage (Vds) of 30V and a continuous drain current (Id) of 2.9A at 25°C. The device features a low on-state resistance (Rds(on)) of 85mOhm at 2.9A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 1V at 250µA.
This MOSFET array operates within a temperature range of -55°C to 150°C (TJ). It is packaged in an 8-SMD, Flat Lead 1206-8 ChipFET™ package, suitable for surface mounting. The device is RoHS3 compliant and Halogen-free, making it suitable for environmentally conscious designs.
Key electrical characteristics include a gate charge (Qg) of 7.5nC at 10V and a maximum power dissipation (Pd) of 1.1W at 25°C. The logic-level gate feature allows for easier integration with lower voltage control circuitry. This part is classified as obsolete, requiring careful consideration for new designs and potential substitution.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V and the gate-source voltage is ±20V.
It is available in an 8-SMD, Flat Lead package with a 1206-8 ChipFET™ supplier device package.
-55°C to 150°C.
Yes, it is verified as lead-free and halogen-free per the datasheet.
It is a dual N-channel MOSFET.
The minimum gate threshold voltage is 1V at ID=250µA.
The maximum drain-source on-resistance is 85mOhm at VGS=10V and ID=2.9A.