| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,777 pcs
|
18777 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
1,883 pcs
|
1883 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
240 pcs
|
240 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 0937 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5855DC-T1-E3 is a P-Channel MOSFET from the TrenchFET® series, utilizing Metal Oxide technology. It features a drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 2.7A at 25°C.
Key electrical specifications include a maximum on-resistance (Rds On) of 110mOhm at 2.7A and 4.5V, a gate threshold voltage (Vgs(th)) of 1V at 250µA, and a maximum gate charge (Qg) of 7.7nC at 4.5V. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a 1206-8 ChipFET™ package, suitable for surface mounting. It includes an isolated Schottky diode. The maximum power dissipation is rated at 1.1W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-SMD, Flat Lead surface mount package (1206-8 ChipFET).
-55°C to 150°C (junction temperature).
1V maximum at 250µA.
110mOhm maximum at 2.7A, 4.5V.
7.7nC maximum at 4.5V.
1.8V and 4.5V.