| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,800 pcs
|
2800 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI5853DDC-T1-E3 is a P-Channel MOSFET designed for charging switch applications in portable devices. It offers a 20V drain-source voltage and a maximum continuous drain current of 4A at 25°C.
The MOSFET exhibits a low on-resistance (Rds(on)) of 105mOhm at a gate-source voltage of 4.5V. It also includes an integrated Schottky diode with a forward voltage of 0.46V at 0.5A.
Packaged in an 8-SMD, Flat Lead (1206-8 ChipFET®) package, this component is suitable for surface mounting. The operating temperature range is -55°C to 150°C.
Key electrical specifications include a gate charge of 12nC and an input capacitance of 320pF. The device is RoHS3 compliant and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20V.
The maximum continuous drain current is 4A at 25°C.
The Rds(on) is a maximum of 105mOhm at 2.9A and 4.5V.
The operating temperature range is -55°C to 150°C.
It is in a 1206-8 ChipFET package suitable for surface mounting.