| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,726 pcs
|
12726 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
|
1,375 pcs
|
1375 pcs | On Request | 1 | On Request | On Request | 1122+ | On Request | On Request | |
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI5853DC-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of up to 2.7A at ambient temperature. The on-resistance (Rds On) is specified as a maximum of 110mOhm at 2.7A and 4.5V gate-to-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It utilizes MOSFET (Metal Oxide) technology and has a gate-to-source voltage (Vgs) limit of ±8V. The part includes a Schottky Diode for isolation. It is supplied in an 8-SMD, Flat Lead package, specifically the 1206-8 ChipFET™ form factor, and is designed for surface mounting.
Environmental compliance includes RoHS3 compliance, an MSL of 1 Unlimited, and REACH unaffected status. The part is suitable for applications requiring a P-Channel MOSFET with these specific electrical and thermal characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
It comes in a 1206-8 ChipFET surface mount package.
The junction temperature range is from -55°C to 150°C.
The maximum gate threshold voltage is 1V at 250µA drain current.
The maximum on-resistance is 110mOhm at 2.7A drain current and 4.5V gate voltage.
The gate charge is 7.7nC at 4.5V gate voltage.
The maximum continuous drain current is 2.7A at ambient temperature.