| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,700 pcs
|
5700 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET from Vishay Dale, part number SI5853CDC-T1-E3, is designed for applications requiring efficient power switching. It offers a drain-source voltage (Vds) of 20V and can handle a continuous drain current (Id) of up to 4A at 25°C case temperature.
The device integrates a low forward voltage Schottky diode, enhancing its functionality for charging switch applications in portable devices. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 104mOhm at 2.5A and 4.5V gate-source voltage, and a gate charge (Qg) of 11nC at 8V.
With a surface mountable 1206-8 ChipFET™ package, the SI5853CDC-T1-E3 is suitable for compact designs. It operates within an ambient temperature range of -55°C to 150°C (TJ). The MOSFET technology ensures efficient switching performance.
Environmental compliance includes RoHS3 compliance and Halogen-free status according to IEC 61249-2-21. The Moisture Sensitivity Level (MSL) is rated as 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI5853CDC-T1-E3 is 20V.
The maximum continuous drain current (Id) is 4A at 25°C case temperature.
The SI5853CDC-T1-E3 is a P-Channel MOSFET.
This MOSFET is supplied in a 1206-8 ChipFET™ package and is surface mountable.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the SI5853CDC-T1-E3 is RoHS3 Compliant.
Yes, it features an integrated Schottky Diode.