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SI5515DC-T1-E3 The Vishay Dale SI5515DC-T1-E3 is an N/P-Channel MOSFET array with a 20V drain-source voltage rating. It is designed for surface mount applications.
Mfr Part #:

SI5515DC-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI5515DC-T1-E3 is an N/P-Channel MOSFET array with a 20V drain-source voltage rating. It is designed for surface mount applications.
✓ Total Stock: 2,190 pcs
$ Price Range: $0.99

SI5515DC-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,340 pcs
On Request
1340 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
850 pcs
On Request
850 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI5515DC-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SI5515DC-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI5515DC-T1-E3 is a MOSFET array featuring both N-channel and P-channel transistors. It offers a drain-to-source voltage (Vdss) of 20V and supports currents of 4.4A for the N-channel and 3A for the P-channel. The on-resistance (Rds On) is specified as a maximum of 40mOhm at 4.4A and 4.5V gate-source voltage.

 

This device operates within a temperature range of -55°C to 150°C (TJ). It utilizes MOSFET technology and has a logic-level gate feature. The package is an 8-pin, 1206-8 ChipFET™ designed for surface mounting.

 

Key electrical characteristics include a gate charge (Qg) of 7.5nC maximum at 4.5V and a gate threshold voltage (Vgs(th)) of 1V maximum at 250µA. The power dissipation is rated at 1.1W.

 

This component is suitable for various electronic applications requiring integrated N and P-channel MOSFETs in a compact surface-mount package.

SI5515DC-T1-E3 Quick Information

Product Type: MOSFET Array
Series: ChipFET
Canonical Name: Vishay Dale SI5515DC-T1-E3 N and P-Channel MOSFET
Subcategory: Array

SI5515DC-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI5515DC-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI5515DC-T1-E3 Features

  • N and P-Channel MOSFET array.
  • 20V drain-to-source voltage.
  • 4.4A and 3A current ratings.
  • Low 40mOhm on-resistance.
  • Surface mount 1206-8 package.

SI5515DC-T1-E3 Applications

  • Ideal for power management circuits.
  • Suitable for battery operated devices.
  • Used in compact electronic designs.
  • Efficient switching applications.

SI5515DC-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SI5515DC-T1-E3?

The drain-to-source voltage (Vdss) is 20V.

What is the operating temperature range of this MOSFET array?

The operating junction temperature range is -55°C to +150°C.

What package does the SI5515DC-T1-E3 come in?

It comes in a 1206-8 ChipFET surface-mount package.

What is the maximum on-resistance of the SI5515DC-T1-E3?

The maximum on-resistance is 40mOhm at 4.4A drain current and 4.5V gate-to-source voltage.

What is the gate threshold voltage of this device?

The maximum gate threshold voltage is 1V at 250µA drain current.

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