SI5515CDC-T1-GE3 The Vishay Dale SI5515CDC-T1-GE3 is a 20V N- and P-Channel MOSFET designed for load switching in portable devices. It features TrenchFET technology and is housed in a 1206-8 ChipFET package.
Mfr Part #:

SI5515CDC-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI5515CDC-T1-GE3 is a 20V N- and P-Channel MOSFET designed for load switching in portable devices. It features TrenchFET technology and is housed in a 1206-8 ChipFET package.
✓ Total Stock: 12,837 pcs
$ Price Range: $0.99

SI5515CDC-T1-GE3 Available from 3 distributors

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✓ Non-Authorised
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10,020 pcs
10020 pcs On Request 1 On Request On Request On Request On Request On Request
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1,738 pcs
1738 pcs On Request 1 On Request On Request On Request On Request On Request
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1,079 pcs
1079 pcs On Request 1 On Request On Request 21+ On Request On Request

SI5515CDC-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI5515CDC-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI5515CDC-T1-GE3 is a versatile MOSFET offering both N-channel and P-channel configurations within a single 1206-8 ChipFET package. It is rated for a Drain-Source Voltage (Vdss) of 20V and can handle a continuous drain current of up to 4A at 25°C. The device features a low Rds(on) of 36mOhm at 6A and 4.5V, making it efficient for power switching applications.

 

Designed with TrenchFET technology, this MOSFET is suitable for load switching in portable devices. It operates over a wide temperature range from -55°C to 150°C. The surface mountable 1206-8 ChipFET package is ideal for space-constrained designs.

 

Key electrical characteristics include a Gate Charge (Qg) of 11.3nC at 5V and a Gate Threshold Voltage (Vgs(th)) of 800mV at 250µA. The MOSFET also boasts a power dissipation rating of 3.1W at 25°C.

 

This component is compliant with RoHS3 standards and is halogen-free, making it suitable for environmentally conscious designs. Its MSL rating is 1, indicating unlimited shelf life under standard conditions.

SI5515CDC-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si54
Canonical Name: N- and P-Channel 20 V (D-S) MOSFET
Subcategory: N and P-Channel

SI5515CDC-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI5515CDC-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI5515CDC-T1-GE3 Features

  • Dual N and P-Channel MOSFET configuration.
  • 20V Drain-Source Breakdown Voltage.
  • 4A Continuous Drain Current.
  • Low 36mOhm Rds(on) at 6A.
  • 1206-8 ChipFET surface mount package.

SI5515CDC-T1-GE3 Applications

  • Ideal for portable device load switching.
  • Suitable for battery powered applications.
  • Efficient power management solutions.
  • Compact design for space-constrained systems.

SI5515CDC-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

20 V for N-channel, -20 V for P-channel.

What is the package type?

Surface mount 1206-8 ChipFET package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the device halogen-free?

Yes, it is halogen-free.

What is the gate charge?

11.3 nC at VGS = 5 V.

What is the on-resistance?

36 mOhm maximum at ID = 6 A, VGS = 4.5 V.

What is the continuous drain current?

4 A at case temperature 25°C.

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