| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
97,020 pcs
|
97020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
181 pcs
|
181 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI5513CDC-T1-GE3 is a dual N/P-channel MOSFET array from Vishay Dale. It features a 20V drain-source voltage rating and a 4A continuous drain current rating. The device is housed in a compact 1206-8 surface-mount package, making it suitable for space-constrained designs. This MOSFET array is commonly used in load switching and power management applications where both N-channel and P-channel devices are needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 20V.
It is available in a 1206-8 surface-mount package.
It is a dual N/P-channel MOSFET array.